Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Sci Rep. 2012;2:674. doi: 10.1038/srep00674. Epub 2012 Sep 19.
On-chip optical isolation plays a key role in optical communications and computing based on silicon integrated photonic structures and has attracted great attentions for long years. Recently there have appeared hot controversies upon whether isolation of light can be realized via linear and passive photonic structures. Here we demonstrate optical isolation of infrared light in purely linear and passive silicon photonic structures. Both numerical simulations and experimental measurements show that the round-trip transmissivity of in-plane infrared light across a silicon photonic crystal slab heterojunction diode could be two orders of magnitudes smaller than the forward transmissivity at around 1,550 nm with a bandwidth of about 50 nm, indicating good performance of optical isolation. The occurrence of in-plane light isolation is attributed to the information dissipation due to off-plane and side-way scattering and selective modal conversion in the multiple-channel structure and has no conflict with the reciprocal principle.
片上光隔离在基于硅集成光子结构的光通信和计算中起着关键作用,多年来一直受到广泛关注。最近,关于线性和无源光子结构是否可以实现光隔离的问题出现了激烈的争论。在这里,我们展示了在纯线性和无源硅光子结构中实现红外光隔离。数值模拟和实验测量都表明,在 1550nm 左右的带宽为 50nm 的情况下,平面内红外光在硅光子晶体平板异质结二极管中的往返传输率比正向传输率小两个数量级,这表明了良好的光隔离性能。平面内光隔离的发生归因于由于在多通道结构中的非平面和侧向散射以及选择性模式转换而导致的信息耗散,并且与互易原理没有冲突。