Glenn Howatt Electroceramics Laboratory, Department of Materials Science and Engineering, Rutgers, The State University of New Jersey, Piscataway, NJ, USA.
IEEE Trans Ultrason Ferroelectr Freq Control. 2012 Sep;59(9):1855-63. doi: 10.1109/TUFFC.2012.2396.
We have studied the effect of deposition parameters on the microstructure, crystallinity, and ferroelectric properties of 0.88(Bi(0.5)Na(0.5))TiO(3)-0.08(Bi(0.5)K(0.5))TiO(3)¿0.04BaTiO(3) thin films grown on SrRuO(3)-coated SrTiO(3) substrates by pulsed laser deposition. The parameters studied were the repetition rates, substrate temperatures, oxygen pressures, and laser energies. It was realized that the films prepared at 800°C, 10 Hz, 400 mtorr, and 1.2 Jcm(-2) exhibited the highest ferroelectric properties. The measured remanent polarization, dielectric constant at 1 kHz, and coercive field for this film were about 30 μCcm(-2), 645, and 85 kVcm(-1), respectively. Increasing the oxygen pressure during deposition from 200 to 400 mtorr improved the crystallinity, microstructure, dielectric constant, and polarization of the films. The leakage current and dielectric loss were suppressed at 400 mtorr because of the lower concentration of oxygen vacancies and disappearing pinholes and surface undulations in the film deposited at this pressure.
我们研究了沉积参数对在 SrRuO3 涂层 SrTiO3 衬底上通过脉冲激光沉积生长的 0.88（Bi0.5Na0.5）TiO3-0.08（Bi0.5K0.5）TiO3-0.04BaTiO3 薄膜的微观结构、结晶度和铁电性能的影响。研究的参数是重复率、衬底温度、氧压和激光能量。结果发现，在 800°C、10 Hz、400 mtorr 和 1.2 Jcm(-2)下制备的薄膜表现出最高的铁电性能。该薄膜的测量剩余极化、在 1 kHz 下的介电常数和矫顽场分别约为 30 μCcm(-2)、645 和 85 kVcm(-1)。在沉积过程中，将氧压从 200 mtorr 增加到 400 mtorr 提高了薄膜的结晶度、微观结构、介电常数和极化。在 400 mtorr 下，由于氧空位浓度降低以及在该压力下沉积的薄膜中出现的针孔和表面波动消失，漏电流和介电损耗得到抑制。
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