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在穿场型量子点中,Trion X+ 呈垂直耦合的 II 型。

Trion X+ in vertically coupled type II quantum dots in threading magnetic field.

机构信息

Group of Investigation in Condensed Matter Theory, Universidad del Magdalena, Santa Marta, AA 731, Colombia.

出版信息

Nanoscale Res Lett. 2012 Sep 26;7(1):532. doi: 10.1186/1556-276X-7-532.

Abstract

We analyze the energy spectrum of a positively charged exciton confined in a semiconductor heterostructure formed by two vertically coupled, axially symmetrical type II quantum dots located close to each other. The electron in the structure is mainly located inside the dots, while the holes generally move in the exterior region close to the symmetry axis. The solutions of the Schrödinger equation are obtained by a variational separation of variables in the adiabatic limit. Numerical results are shown for bonding and anti-bonding lowest-lying of the trion states corresponding to the different quantum dots morphologies, dimensions, separation between them, thicknesses of the wetting layers, and the magnetic field strength.

摘要

我们分析了在由两个垂直耦合、轴对称类型 II 量子点形成的半导体异质结构中被束缚的带正电荷激子的能谱,这两个量子点彼此靠近。结构中的电子主要位于点内,而空穴通常在靠近对称轴的外部区域移动。在绝热极限下,通过变量分离的变分法得到了薛定谔方程的解。数值结果显示了对应于不同量子点形态、尺寸、它们之间的分离、湿层厚度和磁场强度的三重态的最低结合态和反键态。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b735/3563483/9fe11b537a10/1556-276X-7-532-1.jpg

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