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基于非晶锗薄膜的掠角沉积宽带和广角分布式布拉格反射器。

Broadband and wide-angle distributed Bragg reflectors based on amorphous germanium films by glancing angle deposition.

作者信息

Leem Jung Woo, Yu Jae Su

机构信息

Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, South Korea.

出版信息

Opt Express. 2012 Aug 27;20(18):20576-81. doi: 10.1364/OE.20.020576.

Abstract

We fabricated the distributed Bragg reflectors (DBRs) with amorphous germanium (a-Ge) films consisted of the same materials at a center wavelength (λc) of 1.33 μm by the glancing angle deposition. Their optical reflectance properties were investigated in the infrared wavelength region of 1-1.9 μm at incident light angles (θ inc) of 8-70°, together with the theoretical analysis using a rigorous coupled-wave analysis simulation. The two alternating a-Ge films at the incident vapor flux angles of 0 and 75° were formed as the high and low refractive index materials, respectively. The a-Ge DBR with only 5 periods exhibited a normalized stop bandwidth (∆λ/λ c) of ~24.1%, maintaining high reflectance (R) values of > 99%. Even at a high θ inc of 70°, the ∆λ/λ c was ~21.9%, maintaining R values of > 85%. The a-Ge DBR with good uniformity was obtained over the area of a 2 inch Si wafer. The calculated reflectance results showed a similar tendency to the measured data.

摘要

我们通过掠角沉积法,用相同材料的非晶锗(a-Ge)薄膜制作了中心波长(λc)为1.33μm的分布式布拉格反射器(DBR)。在8-70°的入射光角度(θinc)下,研究了它们在1-1.9μm红外波长区域的光学反射特性,并使用严格耦合波分析模拟进行了理论分析。分别在0°和75°的入射蒸气流角度下形成了两层交替的a-Ge薄膜,作为高折射率和低折射率材料。仅5个周期的a-Ge DBR表现出约24.1%的归一化截止带宽(∆λ/λc),同时保持大于99%的高反射率(R)值。即使在70°的高θinc下,∆λ/λc仍约为21.9%,保持大于85%的R值不变。在2英寸硅片的区域内获得了具有良好均匀性的a-Ge DBR。计算得到的反射率结果与测量数据显示出相似的趋势。

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