Leem Jung Woo, Yu Jae Su
Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, South Korea.
Opt Express. 2012 Aug 27;20(18):20576-81. doi: 10.1364/OE.20.020576.
We fabricated the distributed Bragg reflectors (DBRs) with amorphous germanium (a-Ge) films consisted of the same materials at a center wavelength (λc) of 1.33 μm by the glancing angle deposition. Their optical reflectance properties were investigated in the infrared wavelength region of 1-1.9 μm at incident light angles (θ inc) of 8-70°, together with the theoretical analysis using a rigorous coupled-wave analysis simulation. The two alternating a-Ge films at the incident vapor flux angles of 0 and 75° were formed as the high and low refractive index materials, respectively. The a-Ge DBR with only 5 periods exhibited a normalized stop bandwidth (∆λ/λ c) of ~24.1%, maintaining high reflectance (R) values of > 99%. Even at a high θ inc of 70°, the ∆λ/λ c was ~21.9%, maintaining R values of > 85%. The a-Ge DBR with good uniformity was obtained over the area of a 2 inch Si wafer. The calculated reflectance results showed a similar tendency to the measured data.
我们通过掠角沉积法,用相同材料的非晶锗(a-Ge)薄膜制作了中心波长(λc)为1.33μm的分布式布拉格反射器(DBR)。在8-70°的入射光角度(θinc)下,研究了它们在1-1.9μm红外波长区域的光学反射特性,并使用严格耦合波分析模拟进行了理论分析。分别在0°和75°的入射蒸气流角度下形成了两层交替的a-Ge薄膜,作为高折射率和低折射率材料。仅5个周期的a-Ge DBR表现出约24.1%的归一化截止带宽(∆λ/λc),同时保持大于99%的高反射率(R)值。即使在70°的高θinc下,∆λ/λc仍约为21.9%,保持大于85%的R值不变。在2英寸硅片的区域内获得了具有良好均匀性的a-Ge DBR。计算得到的反射率结果与测量数据显示出相似的趋势。