Terawaki Ryo, Takahashi Yasushi, Chihara Masahiro, Inui Yoshitaka, Noda Susumu
Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8570, Japan.
Opt Express. 2012 Sep 24;20(20):22743-52. doi: 10.1364/OE.20.022743.
We have studied the feasibility of extending the operating wavelength range of high-Q silicon nanocavities above and below the 1.55 μm wavelength band, while maintaining Q factors of more than one million. We have succeeded in developing such nanocavities in the optical telecommunication bands from 1.27 μm to 1.50 μm. Very high Q values of more than two million were obtained even for the 1.30 μm band. The Q values increase proportionally to the resonant wavelength because the scattering loss decreases. We have also analyzed the influence of absorption due to surface water. We conclude that high-Q nanocavities are feasible for an even wider wavelength region including parts of the mid-infrared.
我们研究了在保持品质因数超过一百万的同时，将高Q值硅纳米腔的工作波长范围扩展到1.55μm波段之上和之下的可行性。我们已成功在1.27μm至1.50μm的光通信波段中开发出此类纳米腔。即使在1.30μm波段，也获得了超过两百万的极高品质因数。由于散射损耗降低，品质因数与共振波长成正比增加。我们还分析了表面水引起的吸收的影响。我们得出结论，高Q值纳米腔对于包括部分中红外区域在内的更宽波长区域是可行的。
