Nanotechnology Research Center, Bilkent University, Bilkent, Ankara, Turkey.
Nanotechnology. 2012 Nov 9;23(44):444010. doi: 10.1088/0957-4484/23/44/444010. Epub 2012 Oct 18.
We fabricated localized surface plasmon resonance enhanced UV photodetectors on MOCVD grown semi-insulating GaN. Plasmonic resonance in the UV region was attained using 36 nm diameter Al nanoparticles. Extinction spectra of the nanoparticles were measured through spectral transmission measurements. A resonant extinction peak around 300 nm was obtained with Al nanoparticles. These particles gave rise to enhanced absorption in GaN at 340 nm. Spectral responsivity measurements revealed an enhancement factor of 1.5. These results provided experimental verification for obtaining field enhancement by using Al nanoparticles on GaN.
我们在 MOCVD 生长的半绝缘 GaN 上制造了局域表面等离激元共振增强的紫外光电探测器。使用 36nm 直径的 Al 纳米粒子在紫外区域获得等离子体共振。通过光谱透射测量测量了纳米粒子的消光谱。在 Al 纳米粒子处获得了约 300nm 的共振消光峰。这些粒子在 340nm 处引起 GaN 的增强吸收。光谱响应度测量显示增强因子为 1.5。这些结果为在 GaN 上使用 Al 纳米粒子获得场增强提供了实验验证。
