Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan.
ACS Nano. 2012 Nov 27;6(11):9972-7. doi: 10.1021/nn303585g. Epub 2012 Oct 25.
Ideal discrete energy levels in synthesized Au nanoparticles (6.2 ± 0.8 nm) for a chemically assembled single-electron transistor (SET) are demonstrated at 300 mK. The spatial structure of the double-gate SET is determined by two gate and drain voltages dependence of the stability diagram, and electron transport to the Coulomb box of a single, nearby Coulomb island of Au nanoparticles is detected by the SET. The SET exhibits discrete energy levels, and the excited energy level spacing of the Coulomb island is evaluated as 0.73 meV, which well corresponds to the expected theoretical value. The discrete energy levels show magnetic field evolution with the Zeeman effect and dependence on the odd-even electron number of a single Au nanoparticle.
在 300mK 下,合成的金纳米粒子(6.2±0.8nm)中展示了理想的离散能级,用于化学组装的单电子晶体管(SET)。双门 SET 的空间结构由两个门和漏极电压对稳定图的依赖性决定,通过 SET 检测到电子向单个附近金纳米粒子库仑岛的库仑盒的传输。SET 表现出离散能级,库仑岛的激发能级间距被评估为 0.73meV,这与预期的理论值非常吻合。离散能级表现出磁场随塞曼效应的演化以及对单个金纳米粒子的奇偶电子数的依赖性。