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支持V79-4的辐射敏感突变体在接受250 kVp X射线或中子照射后存在高效DNA双链断裂重新连接的证据。

Evidence to support the existence of efficient DNA double-strand break rejoining in a radiosensitive mutant of V79-4 following irradiation with 250 kVp X-rays or neutrons.

作者信息

Fox J C

机构信息

Gray Laboratory, Mount Vernon Hospital, Northwood, Middlesex, Great Britain.

出版信息

Mutat Res. 1990 Mar;235(2):41-7. doi: 10.1016/0921-8777(90)90056-b.

Abstract

The repair of ionising-radiation-induced DNA double-strand break type damage was measured by Kohn neutral elution in an X-ray-sensitive mutant of V79-4, irs1. This was done in order to investigate further the likelihood that irs1 carries a defect which leads to error-prone repair of DNA damage, and not simply a reduced ability to rejoin DNA double-strand breaks. The mutant displayed an equal increase in sensitivity to the lethal effects of neutrons, as compared to X-rays. Both irs1 and V79-4 showed an increased sensitivity to the killing effects of neutrons of around 2 at 10% survival. irs1 also showed an exponential survival after either X-rays or neutrons. The induction of DNA double-strand breaks was measured in both cell lines over a dose range of 10-40 Gy using Kohn neutral filter elution. Induction of breaks by X-rays in irs1 seemed to increase slightly with dose, relative to induction in V79-4, so that at 40 Gy 1.5 times more DNA double-strand breaks were measured in irs1 cells than in V79-4. Neutron irradiation resulted in a more similar level of induction in either strain after 10-40 Gy. This difference in induction of damage may be due to a different cell-cycle composition in either cell line. The rejoining of X-ray induced double-strand breaks showed a very similar pattern (on a percentage rejoined basis) in both cell lines, although from the induction data at 40 Gy, the dose at which rejoining was measured, fewer breaks were rejoined in V79-4 but also fewer breaks remained unsealed. Neutron-induced breaks, however, were rejoined more efficiently in irs1 again on a percentage basis, but also in absolute terms since similar induction was seen after 40 Gy. This data, together with the differences seen in the rejoining of X-ray compared to neutron induced breaks, may indirectly support the proposal that irs1 is a misrepair mutant.

摘要

在V79 - 4的X射线敏感突变体irs1中,通过科恩中性洗脱法测定电离辐射诱导的DNA双链断裂型损伤的修复情况。这样做是为了进一步研究irs1携带导致DNA损伤易错修复缺陷的可能性,而不仅仅是DNA双链断裂重新连接能力降低。与X射线相比,该突变体对中子的致死效应敏感性同样增加。在10%存活时,irs1和V79 - 4对中子杀伤效应的敏感性均增加约2倍。irs1在接受X射线或中子照射后也呈指数存活。使用科恩中性滤膜洗脱法在10 - 40 Gy剂量范围内测定了两种细胞系中DNA双链断裂的诱导情况。相对于V79 - 4,irs1中X射线诱导的断裂似乎随剂量略有增加,因此在40 Gy时,irs1细胞中测得的DNA双链断裂比V79 - 4多1.5倍。在10 - 40 Gy后,中子照射在两种菌株中导致的诱导水平更相似。损伤诱导的这种差异可能是由于两种细胞系中细胞周期组成不同。X射线诱导的双链断裂的重新连接在两种细胞系中显示出非常相似的模式(以重新连接的百分比为基础),尽管从40 Gy的诱导数据来看,即测量重新连接的剂量,V79 - 4中重新连接的断裂较少,但未封闭的断裂也较少。然而,中子诱导的断裂在irs1中以百分比计算再次更有效地重新连接,而且从绝对值来看也是如此,因为在40 Gy后观察到相似的诱导情况。这些数据,连同与中子诱导的断裂相比X射线重新连接中观察到的差异,可能间接支持irs1是错配修复突变体的提议。

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