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基于氮化硼纳米管内 Pd3 基过渡金属簇的封装的理论研究。

Theoretical study on the encapsulation of Pd3-based transition metal clusters inside boron nitride nanotubes.

机构信息

Key Laboratory for Photoelectric Bandgap Materials, Ministry of Education, School of Chemistry and Chemical Engineering, Harbin, Harbin Normal University, Harbin 150025, China.

出版信息

J Mol Model. 2013 Mar;19(3):1143-51. doi: 10.1007/s00894-012-1662-2. Epub 2012 Nov 13.

Abstract

Chemical functionalization of the boron nitride nanotube (BNNT) allows a wider flexibility in engineering its electronic and magnetic properties as well as chemical reactivity, thus making it have potential applications in many fields. In the present work, the encapsulation of 13 different Pd(3)M (M = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Pt, and Au) clusters inside the (10, 0) BNNT has been studied by performing comprehensive density functional theory (DFT) calculations. Particular attention is paid to searching for the stable configurations, calculating the corresponding binding energies, and evaluating the effects of the encapsulation of Pd(3)M cluster on the electronic and magnetic properties of BNNT. The results indicate that all the studied Pd(3)M clusters can be stably encapsulated inside the (10, 0) BNNT, with binding energies ranging from -0.96 (for Pd(3)Sc) to -5.31 eV (for Pd(3)V). Moreover, due to a certain amount of charge transfer from Pd(3)M clusters to BNNT, certain impurity states are induced within the band gap of pristine BNNT, leading to the reduction of the band gap in various ways. Most Pd(3)M@BNNT nanocomposites exhibit nonzero magnetic moments, which mainly originate from the contribution of the Pd(3)M clusters. In particular, the adsorption of O(2) molecule on BNNT is greatly enhanced due to Pd(3)M encapsulation. The elongation of O-O bonds of the adsorbed O(2) molecules indicates that Pd(3)M@BNNT could be used to fabricate the oxidative catalysis.

摘要

氮化硼纳米管(BNNT)的化学功能化使其电子和磁性性质以及化学反应性具有更大的灵活性,从而使其在许多领域具有潜在的应用。在本工作中,通过执行全面的密度泛函理论(DFT)计算,研究了 13 种不同的 Pd(3)M(M = Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Pd、Pt 和 Au)团簇在(10,0)BNNT 内的封装。特别关注寻找稳定构型、计算相应的结合能以及评估 Pd(3)M 团簇封装对 BNNT 电子和磁性性质的影响。结果表明,所有研究的 Pd(3)M 团簇都可以稳定地封装在(10,0)BNNT 内,结合能范围从 -0.96(对于 Pd(3)Sc)到 -5.31 eV(对于 Pd(3)V)。此外,由于 Pd(3)M 团簇向 BNNT 转移一定数量的电荷,在原始 BNNT 的能带隙内诱导出一定数量的杂质态,导致能带隙以各种方式减小。大多数 Pd(3)M@BNNT 纳米复合材料表现出非零磁矩,这主要源于 Pd(3)M 团簇的贡献。特别是,由于 Pd(3)M 封装,BNNT 上吸附的 O(2)分子的吸附大大增强。吸附的 O(2)分子的 O-O 键伸长表明 Pd(3)M@BNNT 可用于制备氧化催化。

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