Department of Cell Biology, Albert Einstein College of Medicine Bronx, NY, USA.
Front Genet. 2012 Nov 16;3:251. doi: 10.3389/fgene.2012.00251. eCollection 2012.
The immunoglobulin heavy chain locus undergoes a series of DNA rearrangements and modifications to achieve the construction and expression of individual antibody heavy chain genes in B cells. These events affect variable regions, through VDJ joining and subsequent somatic hypermutation, and constant regions through class switch recombination (CSR). Levels of IgH expression are also regulated during B cell development, resulting in high levels of secreted antibodies from fully differentiated plasma cells. Regulation of these events has been attributed primarily to two cis-elements that work from long distances on their target sequences, i.e., an ∼1 kb intronic enhancer, Eμ, located between the V region segments and the most 5' constant region gene, Cμ; and an ∼40 kb 3' regulatory region (3' RR) that is located downstream of the most 3' C(H) gene, Cα. The 3' RR is a candidate for an "end" of B cell-specific regulation of the Igh locus. The 3' RR contains several B cell-specific enhancers associated with DNase I hypersensitive sites (hs1-4), which are essential for CSR and for high levels of IgH expression in plasma cells. Downstream of this enhancer-containing region is a region of high-density CTCF binding sites, which extends through hs5, 6, and 7 and further downstream. CTCF, with its enhancer-blocking activities, has been associated with all mammalian insulators and implicated in multiple chromosomal interactions. Here we address the 3' RR CTCF-binding region as a potential insulator of the Igh locus, an independent regulatory element and a predicted modulator of the activity of 3' RR enhancers. Using chromosome conformation capture technology, chromatin immunoprecipitation, and genetic approaches, we have found that the 3' RR with its CTCF-binding region interacts with target sequences in the V(H), Eμ, and C(H) regions through DNA looping as regulated by protein binding. This region impacts on B cell-specific Igh processes at different stages of B cell development.
免疫球蛋白重链基因座经历一系列 DNA 重排和修饰,以实现 B 细胞中个体抗体重链基因的构建和表达。这些事件影响可变区,通过 VDJ 连接和随后的体细胞超突变,以及通过类别转换重组(CSR)影响恒定区。IgH 表达水平也在 B 细胞发育过程中受到调节,从而使完全分化的浆细胞产生高水平的分泌型抗体。这些事件的调节主要归因于两个顺式元件,它们从长距离作用于其靶序列,即位于 V 区片段和最 5' 恒定区基因 Cμ 之间的约 1 kb 内含子增强子 Eμ;和位于最 3' C(H) 基因 Cα 下游的约 40 kb 3' 调节区(3' RR)。3' RR 是 B 细胞特异性调节 Igh 基因座的“末端”候选者。3' RR 包含几个与 DNA 酶 I 超敏位点(hs1-4)相关的 B 细胞特异性增强子,这些增强子对于 CSR 和浆细胞中 IgH 表达的高水平是必不可少的。在这个增强子包含区域的下游是一个高密度 CTCF 结合位点区域,它延伸通过 hs5、6 和 7 以及更远的下游。CTCF 及其增强子阻断活性与所有哺乳动物绝缘子相关,并与多种染色体相互作用有关。在这里,我们将 3' RR CTCF 结合区域视为 Igh 基因座的潜在绝缘子,作为一个独立的调节元件和 3' RR 增强子活性的预测调节剂。使用染色体构象捕获技术、染色质免疫沉淀和遗传方法,我们发现 3' RR 及其 CTCF 结合区域通过蛋白结合调节的 DNA 环化与 V(H)、Eμ 和 C(H) 区域中的靶序列相互作用。该区域在 B 细胞发育的不同阶段影响 B 细胞特异性 Igh 过程。