Shen Fengyu, Que Wenxiu, Zhang Jin, Qiu Xinku, Yin Xingtian, Liao Yulong
Electronic Materials Research Laboratory, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China.
J Nanosci Nanotechnol. 2013 Feb;13(2):1168-72. doi: 10.1166/jnn.2013.6045.
One-dimensional ZnO nanorods arrays were self-assembly grown on a ZnO thin film, and then CdS quantum dots were deposited on the ZnO nanorods arrays by a successive ionic layer adsorption and reaction process. Scanning electron microscopy and transmission electron microscopy results indicate that the CdS quantum dots can be uniformly deposited on the ZnO nanorods arrays and the thickness of the CdS shell can be controlled through varying the number of the adsorption and reaction cycle. For a typical sample prepared by the adsorption and reaction cycles of 10 times, the thickness of the CdS is about 4.0 nm. Monodispersed CulnS2 quantum dots with a size of 3.5 nm were synthesized by a solvothermal route and then deposited on the ZnO nanorods arrays coated with the CdS quantum dots by using an electrophoretic deposition technique. Optical and electrical properties indicate that the as-fabricated ZnO/CdS/CulnS2 heterojunction structure not only exhibits a high absorption of the incident light in visible region but also can reduce a leakage current as compared to the ZnO/CdS heterojunction structure. Electrical impedance spectroscopy is used to analyze the electrochemical reaction of the interfaces.
一维ZnO纳米棒阵列在ZnO薄膜上自组装生长，然后通过连续离子层吸附和反应过程将CdS量子点沉积在ZnO纳米棒阵列上。扫描电子显微镜和透射电子显微镜结果表明，CdS量子点可以均匀地沉积在ZnO纳米棒阵列上，并且可以通过改变吸附和反应循环的次数来控制CdS壳层的厚度。对于通过10次吸附和反应循环制备的典型样品，CdS的厚度约为4.0 nm。通过溶剂热法合成了尺寸为3.5 nm的单分散CulnS2量子点，然后使用电泳沉积技术将其沉积在涂有CdS量子点的ZnO纳米棒阵列上。光学和电学性质表明，所制备的ZnO/CdS/CulnS2异质结结构不仅在可见光区域对入射光具有高吸收，而且与ZnO/CdS异质结结构相比还可以降低漏电流。采用电阻抗谱分析界面的电化学反应。
