Physikalisch-Technische Bundesanstalt, Berlin, Germany.
Anal Chem. 2013 Jan 2;85(1):193-200. doi: 10.1021/ac3024872. Epub 2012 Dec 18.
Improvement in the performance of functional nanoscaled devices involves novel materials, more complex structures, and advanced technological processes. The transitions to heavier elements and to thicker layers restrict access to the chemical and physical characterization of the internal material interfaces. Conventional nondestructive characterization techniques such as X-ray photoelectron spectroscopy suffer from sensitivity and quantification restrictions whereas destructive techniques such as ion mass spectrometry may modify the chemical properties of internal interfaces. Thus, novel methods providing sufficient sensitivity, reliable quantification, and high information depths to reveal interfacial parameters are needed for R&D challenges on the nanoscale. Measurement strategies adapted to nanoscaled samples enable the combination of Near-Edge X-ray Absorption Fine Structure and Grazing Incidence X-ray Fluorescence to allow for chemical nanometrology of internal material interfaces. Their validation has been performed at nanolayered model structures consisting of a silicon substrate, a physically vapor deposited Ni metal layer, and, on top, a chemically vapor deposited B(x)C(y)N(z) light element layer.
功能纳米尺度器件性能的提升涉及新型材料、更复杂的结构和先进的工艺流程。向更重的元素和更厚的层过渡限制了对内部材料界面的化学和物理特性的研究。传统的非破坏性表征技术，如 X 射线光电子能谱，受到灵敏度和定量限制的限制，而破坏性技术，如离子质谱，可能会改变内部界面的化学性质。因此，需要新的方法来提供足够的灵敏度、可靠的定量和高的信息深度，以揭示界面参数，从而应对纳米尺度上的研发挑战。适用于纳米尺度样品的测量策略，可以结合近边 X 射线吸收精细结构和掠入射 X 射线荧光，实现内部材料界面的化学纳米计量学。这些方法已经在由硅衬底、物理气相沉积的 Ni 金属层以及化学气相沉积的轻元素 B(x)C(y)N(z)层组成的纳米层状模型结构上进行了验证。
