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拓扑绝缘体 Bi2Se3、Bi2Te3 和 Sb2Te3 的红外光谱中的电荷非均匀性特征。

Signatures of charge inhomogeneities in the infrared spectra of topological insulators Bi2Se3, Bi2Te3 and Sb2Te3.

机构信息

Department of Physics, University of Akron, Akron, OH 44325, USA.

出版信息

J Phys Condens Matter. 2013 Feb 20;25(7):075501. doi: 10.1088/0953-8984/25/7/075501. Epub 2013 Jan 17.

Abstract

We present the results of an infrared spectroscopy study of topological insulators Bi(2)Se(3), Bi(2)Te(3) and Sb(2)Te(3). Reflectance spectra of all three materials look similar, with a well defined plasma edge. However, there are some important differences. Most notably, as temperature decreases the plasma edge shifts to lower frequencies in Bi(2)Se(3), whereas in Bi(2)Te(3) and Sb(2)Te(3) it shifts to higher frequencies. In the loss function spectra we identify asymmetric broadening of the plasmon, and assign it to the presence of charge inhomogeneities. It remains to be seen if charge inhomogeneities are characteristic of all topological insulators, and whether they are of intrinsic or extrinsic nature.

摘要

我们呈现了拓扑绝缘体 Bi(2)Se(3)、Bi(2)Te(3) 和 Sb(2)Te(3) 的红外光谱研究结果。这三种材料的反射光谱都非常相似,具有明显的等离子体边缘。然而,它们也存在一些重要的差异。最显著的是,随着温度的降低,Bi(2)Se(3)中的等离子体边缘向较低频率移动,而在 Bi(2)Te(3)和 Sb(2)Te(3)中则向较高频率移动。在损耗函数光谱中,我们观察到等离子体的不对称展宽,并将其归因于电荷不均匀性的存在。电荷不均匀性是否是所有拓扑绝缘体的特征,以及它们是内在的还是外在的,还有待观察。

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