University College London, Kathleen Lonsdale Materials Chemistry, Department of Chemistry, London, UK.
Adv Mater. 2012 Apr 24;24(16):2154-8. doi: 10.1002/adma.201200187. Epub 2012 Mar 19.
Intrinsic topological insulators are realized by alloying Bi(2)Te(3) with Bi(2)Se(3). Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.
本征拓扑绝缘体是通过将 Bi(2)Te(3)与 Bi(2)Se(3) 合金化实现的。角分辨光发射和体输运测量表明费米能级很容易被调进体带隙。本征缺陷形貌的第一性原理计算突出了反位缺陷在实现这一点方面的关键作用，并预测了实现最大电阻拓扑绝缘体的最佳生长条件。
