SKKU Advanced Institute of Nanotechnology, Center for Human Interface Nano Technology, Sungkyunkwan University, Suwon 440-746, Korea.
Nanoscale. 2013 Feb 21;5(4):1483-8. doi: 10.1039/c2nr33294a.
We report the original fabrication and performance of a photocurrent device that uses directly grown CdSe quantum dots (QDs) on a graphene basal plane. The direct junction between the QDs and graphene and the high quality of the graphene grown by chemical vapor deposition enables highly efficient electron transfer from the QDs to the graphene. Therefore, the hybrids show large photocurrent effects with a fast response time and shortened photoluminescence (PL) lifetime. The PL lifetime quenching can be explained as being due to the efficient electron transfer as evidenced by femtosecond transient absorption spectroscopy. These hybrids are expected to find applications in flexible electronics and optoelectronic devices.
我们报告了一种光电流器件的原始制作和性能，该器件使用在石墨烯基面直接生长的 CdSe 量子点 (QD)。QD 与石墨烯之间的直接结和化学气相沉积生长的高质量石墨烯使得电子从 QD 高效地转移到石墨烯。因此，这些杂化物表现出具有快速响应时间和缩短的光致发光 (PL) 寿命的大的光电流效应。PL 寿命猝灭可以通过飞秒瞬态吸收光谱解释为由于电子转移效率高。这些杂化物有望在柔性电子学和光电设备中找到应用。
