Center for Integrated Optoelectronics, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, People's Republic of China.
Nanotechnology. 2013 Feb 15;24(6):065402. doi: 10.1088/0957-4484/24/6/065402. Epub 2013 Jan 22.
Numerical simulation of the photocurrent density is performed for a two-junction nanowire (NW)-on-silicon solar cell under AM1.5G illumination. The photocurrent density is determined for NW diameters from 100-250 nm, period (spacing) from 250-1000 nm, and length of 5 μm. The dependence of photocurrent density on NW bandgap is also determined. For each NW bandgap, the optimum diameter and period are determined to obtain current matching between the top NW cell and the bottom Si cell.
在 AM1.5G 光照下，对基于硅的两结纳米线（NW）太阳能电池的光电流密度进行数值模拟。对 NW 直径（100-250nm）、周期（间距）（250-1000nm）和长度（5μm）进行了研究，确定了光电流密度的变化情况。还确定了光电流密度对 NW 带隙的依赖性。对于每个 NW 带隙，确定了最佳直径和周期，以实现顶部 NW 电池和底部 Si 电池之间的电流匹配。
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