National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base) in Shaanxi Province, National Photoelectric Technology and Functional Materials & Application of Science and Technology International Cooperation Base, Institute of Photonics & Photon Technology, Northwest University, Xi'an 710069, People's Republic of China.
J Phys Condens Matter. 2013 Feb 27;25(8):085302. doi: 10.1088/0953-8984/25/8/085302. Epub 2013 Jan 30.
First-principles calculations have been carried out to investigate the adsorption of Pd(n) (n ≤ 10) clusters on the single-walled (8, 0) and (5, 5) SiC nanotubes (SiCNTs). We find that the Pd(n) clusters can be stably adsorbed on the outer surfaces of both SiCNTs through an exothermic adsorption process. The adsorption energies of the Pd(n) clusters on the (8, 0) SiCNT are generally larger than those of clusters on the (5, 5) SiCNT. The number of bonds between the Pd(n) clusters and the SiCNTs increases with increasing cluster size. The Pd atoms adjacent to the SiCNTs adsorb preferentially on the bridge sites over an axial Si-C bond. The adsorption leads to elongation of the Pd-Pd bond lengths and structural reconstruction for the Pd(n) clusters. Moreover, the adsorbed Pd(n) clusters show two-layered structures at the cluster size n ≥ 4. We also find that the adsorbed Pd(n) clusters induce some impurity states within the band gap of the pristine SiCNTs and the strong pd hybridization near the Fermi level, thereby reducing the band gap. The charge transfer from the SiCNTs to the Pd atoms that occurs is observed for all the systems considered. Due to the strong interactions between the Pd(n) clusters and the SiCNTs, most adsorbed Pd(n) clusters exhibit zero magnetic moment.
我们采用第一性原理计算研究了 Pd(n)(n≤10)团簇在单壁(8,0)和(5,5)碳化硅纳米管(SiCNTs)上的吸附。结果表明,Pd(n)团簇通过放热吸附过程稳定地吸附在两种 SiCNTs 的外表面上。Pd(n)团簇在(8,0)SiCNT 上的吸附能通常大于在(5,5)SiCNT 上的吸附能。随着团簇尺寸的增加,Pd(n)团簇与 SiCNTs 之间的键数增加。与 SiCNTs 相邻的 Pd 原子优先在桥位上而不是轴向 Si-C 键上吸附。吸附导致 Pd-Pd 键长的延长和 Pd(n)团簇的结构重构。此外,在 n≥4 的团簇尺寸下,吸附的 Pd(n)团簇在团簇上呈现双层结构。我们还发现,吸附的 Pd(n)团簇在原始 SiCNTs 的能带隙内诱导了一些杂质态,并且在费米能级附近发生强烈的 pd 杂化,从而减小了能带隙。对于所有考虑的体系,观察到从 SiCNTs 到 Pd 原子的电荷转移。由于 Pd(n)团簇与 SiCNTs 之间的强相互作用,大多数吸附的 Pd(n)团簇表现出零磁矩。