Paul-Drude-Institut für Festkörkperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
Phys Rev Lett. 2012 Dec 28;109(26):266602. doi: 10.1103/PhysRevLett.109.266602.
Spin dephasing via the spin-orbit interaction (SOI) is a major mechanism limiting the electron spin lifetime in III-V zincblende quantum wells (QWs). The dephasing can be suppressed in GaAs(111) quantum wells by applying an electric field. The suppression has been attributed to the compensation of the intrinsic SOI associated with the bulk inversion asymmetry of the GaAs lattice by a structural induced asymmetry SOI term induced by an electric field. We provide direct experimental evidence for this mechanism by demonstrating the transition between the bulk inversion asymmetry-dominated to a structural induced asymmetry-dominated regime via photoluminescence measurements carried out over a wide range of applied fields. Spin lifetimes exceeding 100 ns are obtained near the compensating electric field, thus making GaAs(111) QWs excellent candidates for the electrical storage and manipulation of spins.
通过自旋轨道相互作用（SOI）的自旋退相是限制 III-V 锌矿量子阱（QW）中电子自旋寿命的主要机制。通过施加电场，可以在 GaAs(111)量子阱中抑制退相。这种抑制归因于通过电场诱导的结构诱导非对称 SOI 项来补偿与 GaAs 晶格体反转不对称性相关的固有 SOI。我们通过在广泛的应用场范围内进行的光致发光测量，提供了这种机制的直接实验证据，证明了从体反转不对称性主导到结构诱导非对称主导的转变。在补偿电场附近获得超过 100 ns 的自旋寿命，因此 GaAs(111) QW 是电存储和操纵自旋的优秀候选材料。
