Department of Materials Science and Engineering, Stanford University, Stanford, California, United States.
ACS Nano. 2013 Apr 23;7(4):3205-11. doi: 10.1021/nn3058533. Epub 2013 Apr 5.
Nanowire solar cells are receiving a significant amount of attention for their potential to improve light absorption and charge collection in photovoltaics. Single-nanowire solar cells offer the ability to investigate performance limits for macroscale devices, as well as the opportunity for in-depth structural characterization and property measurement in small working devices. Copper indium selenide (CIS) is a material uniquely suited to these investigations. Not only could nanowire solar cells of CIS perhaps allow efficient macroscale photovoltaics to be fabricated while reducing the amount of CIS required, important for a system with possible resource limitations, but it is also a photovoltaic material for which fundamental understanding has been elusive. We here present a recipe for a scaled up vapor liquid solid based synthesis of CIS nanowires, in-depth material and property correlation of single crystalline CIS nanowires, and the first report of a single CIS nanowire solar cell. The synthesis was accomplished by annealing copper-coated In2Se3 nanowires at a moderate temperature of 350 °C, leading to solid-state reaction forming CIS nanowires. These nanowires are p-type with a resitivity of 6.5 Ωcm. Evidence is observed for a strong diameter dependence on the nanowire transport properties. The single-nanowire solar cells have an open-circuit voltage of 500 mV and a short-circuit current of 2 pA under AM 1.5 illumination.
纳米线太阳能电池因其在提高光伏光吸收和电荷收集方面的潜力而受到广泛关注。单根纳米线太阳能电池能够研究宏观器件的性能极限,同时也为在小型工作器件中进行深入的结构表征和性能测量提供了机会。铜铟硒(CIS)是一种非常适合这些研究的材料。纳米线太阳能电池不仅可以在减少 CIS 用量的同时,制造出高效的宏观光伏器件,这对于可能存在资源限制的系统来说非常重要,而且它也是一种基础理解仍难以捉摸的光伏材料。我们在此提出了一种基于气相液固法(VLS)的 CIS 纳米线规模化合成方案,对单晶 CIS 纳米线的材料和性能进行了深入的相关性研究,并首次报道了 CIS 纳米线太阳能电池。该合成方法是通过在 350°C 的中等温度下退火铜包覆的 In2Se3 纳米线,实现固态反应形成 CIS 纳米线。这些纳米线为 p 型,电阻率为 6.5 Ωcm。观察到纳米线输运性能与直径有很强的依赖关系。在 AM 1.5 光照下,单个纳米线太阳能电池的开路电压为 500 mV,短路电流为 2 pA。