Schoen David T, Peng Hailin, Cui Yi
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305-4034, USA.
J Am Chem Soc. 2009 Jun 17;131(23):7973-5. doi: 10.1021/ja901086t.
In(2)Se(3) nanowires synthesized by the VLS technique are transformed by solid-state reaction with copper into high-quality single-crystalline CuInSe(2) nanowires. The process is studied by in situ transmission electron microscopy. The transformation temperature exhibits a surprising anisotropy, with In(2)Se(3) nanowires grown along their [0001] direction transforming at a surprisingly low temperature of 225 degrees C, while nanowires in a [11(2)0] orientation require a much higher temperature of 585 degrees C. These results offer a route to the synthesis of CuInSe(2) nanowires at a relatively low temperature as well as insight into the details of a transformation commonly used in the fabrication of thin-film solar cells.
通过VLS技术合成的In(2)Se(3)纳米线通过与铜的固态反应转变为高质量的单晶CuInSe(2)纳米线。该过程通过原位透射电子显微镜进行研究。转变温度表现出惊人的各向异性，沿其[0001]方向生长的In(2)Se(3)纳米线在低至225℃的温度下转变，而[11(2)0]取向的纳米线则需要585℃的更高温度。这些结果为在相对较低温度下合成CuInSe(2)纳米线提供了一条途径，同时也深入了解了薄膜太阳能电池制造中常用转变的细节。
