Honda Syuta, Itoh Hiroyoshi
Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.
J Nanosci Nanotechnol. 2012 Nov;12(11):8662-5. doi: 10.1166/jnn.2012.6481.
Pure spin current injection has recently been developed as an effective method of controlling magnetization in spintronic devices. In order to investigate the dynamics of the magnetization reversal process in magnetic films with pure spin current injection, we performed micromagnetics simulations based on the Landau-Lifshitz equation and taking into account a term representing spin transfer torque caused by the pure spin current. We studied the time evolution of magnetization in permalloy films and estimated the probability of magnetization switching to show how the probability depends on the width of the film and the intensity of the injected spin current. We found that, in narrow films, a transverse domain wall is formed in the film and that this wall moves outside the film when magnetization switching occurs. The switching time becomes shorter as the intensity of the injected spin current is increased. In wide films, on the other hand, magnetization switching does not occur even if the intensity of injected spin current is increased. In such cases, either a magnetic vortex core is formed or the configuration of the moments hardly changes from the initial magnetic state.
纯自旋流注入最近已发展成为一种控制自旋电子器件中磁化强度的有效方法。为了研究在具有纯自旋流注入的磁性薄膜中磁化反转过程的动力学,我们基于朗道 - 里夫希茨方程进行了微磁学模拟,并考虑了一个由纯自旋流引起的表示自旋转移力矩的项。我们研究了坡莫合金薄膜中磁化强度的时间演化,并估计了磁化翻转的概率,以展示该概率如何依赖于薄膜的宽度和注入自旋流的强度。我们发现,在窄薄膜中,薄膜内会形成一个横向畴壁,并且当发生磁化翻转时,这个畴壁会移动到薄膜之外。随着注入自旋流强度的增加,翻转时间会变短。另一方面,在宽薄膜中,即使注入自旋流的强度增加,磁化翻转也不会发生。在这种情况下,要么形成一个磁涡核,要么磁矩的构型与初始磁态相比几乎没有变化。