Shenyang National Laboratory for Materials Science, Institute of Metal Research, and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China.
ACS Nano. 2013 Mar 26;7(3):2126-31. doi: 10.1021/nn304684b. Epub 2013 Mar 8.
We report the composition- and gate voltage-induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature-dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ∼10%. In Bi2(Te1-xSex)3 nanoribbons with x ≈ 20%, gate voltage enables ambipolar modulation of resistance (or conductance) in samples with thicknesses around or larger than 100 nm, indicating significantly enhanced contribution in transport from the gapless surface states.
我们报告了在化学合成的 Bi2(Te1-xSex)3 纳米带中通过组成和栅极电压诱导的输运性质的调控。我们发现，当 x 大于约 10%时，增加 Se 浓度可有效抑制体载流子输运，并在 Bi2(Te1-xSex)3 纳米带的温度依赖性电阻中诱导半导体行为。在 x ≈ 20%的 Bi2(Te1-xSex)3 纳米带中，栅极电压可以使厚度约为或大于 100nm 的样品的电阻（或电导）产生双极性调制，这表明来自无能隙表面态的输运贡献显著增强。
