在 Si（111）衬底上制备 ZnO/GaN 异质结构纳米柱薄膜及其性能

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.

机构信息

School of Physics and Technology, University of Jinan, 250022, Jinan, People's Republic of China.

出版信息

Nanoscale Res Lett. 2013 Feb 28;8(1):112. doi: 10.1186/1556-276X-8-112.

DOI:10.1186/1556-276X-8-112

PMID:23448090

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3599829/

Abstract

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

摘要

通过脉冲激光沉积（PLD）分别在裸 Si（111）衬底和 GaN 缓冲层修饰的 Si（111）衬底上获得了氧化锌薄膜。GaN 缓冲层是通过两步法实现的。利用 X 射线衍射、场发射扫描电子显微镜、红外吸收光谱和光致发光（PL）光谱分别研究了这些薄膜的结构、表面形貌、组成和光学性质。扫描电子显微镜图像表明，在 GaN/Si（111）衬底上生长的 ZnO 薄膜表面呈现出花状晶粒，而在 Si（111）衬底上生长的 ZnO 薄膜则呈现出倾斜柱状的形态。PL 光谱表明，GaN 缓冲层上 ZnO 薄膜的紫外发射效率较高，且 ZnO 薄膜的 Zni 和 Vo 缺陷发射较低。结果表明，GaN 缓冲层的存在可以极大地提高 Si（111）衬底上通过 PLD 技术生长的 ZnO 薄膜的质量。