基于氮化物的微米级六棱锥阵列垂直发光二极管的N极湿法蚀刻

Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching.

作者信息

Ma Jun, Wang Liancheng, Liu Zhiqiang, Yuan Guodong, Ji Xiaoli, Ma Ping, Wang Junxi, Yi Xiaoyan, Wang Guohong, Li Jinmin

机构信息

Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

出版信息

Opt Express. 2013 Feb 11;21(3):3547-56. doi: 10.1364/OE.21.003547.

DOI:10.1364/OE.21.003547

PMID:23481812

Abstract

In this work, we reported the fabrication of nitride-based hexagonal pyramids array (HPA) vertical-injection light emitting diodes (V-LEDs) by N-polar wet etching. The performance of HPA V-LEDs devices was significantly improved with 30% higher internal quantum efficiency compared with conventional roughened broad area V-LEDs. The simulated extraction efficiency by finite difference time domain method was 20% higher than typical roughened V-LEDs. The reversed leakage current of HPA V-LEDs was reduced due to better crystal quality, which was confirmed by conductive atomic force microscopy measurement. Furthermore, the efficiency droop for HPA V-LEDs were substantially alleviated.

摘要

在这项工作中，我们报道了通过N极湿法蚀刻制备基于氮化物的六角锥阵列（HPA）垂直注入发光二极管（V-LED）。与传统的粗糙化大面积V-LED相比，HPA V-LED器件的性能显著提高，其内部量子效率提高了30%。通过时域有限差分法模拟的提取效率比典型的粗糙化V-LED高20%。导电原子力显微镜测量证实，由于晶体质量更好，HPA V-LED的反向漏电流降低。此外，HPA V-LED的效率下降也得到了显著缓解。