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在 Bi-O-S 体系中堆积变体和超导电性。

Stacking variants and superconductivity in the Bi-O-S system.

机构信息

Department of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, USA.

出版信息

J Am Chem Soc. 2013 Apr 10;135(14):5372-4. doi: 10.1021/ja4011767. Epub 2013 Mar 28.

Abstract

High-temperature superconductivity has a range of applications from sensors to energy distribution. Recent reports of this phenomenon in compounds containing electronically active BiS2 layers have the potential to open a new chapter in the field of superconductivity. Here we report the identification and basic properties of two new ternary Bi-O-S compounds, Bi2OS2 and Bi3O2S3. The former is non-superconducting; the latter likely explains the superconductivity at T(c) = 4.5 K previously reported in "Bi4O4S3". The superconductivity of Bi3O2S3 is found to be sensitive to the number of Bi2OS2-like stacking faults; fewer faults correlate with increases in the Meissner shielding fractions and T(c). Elucidation of the electronic consequences of these stacking faults may be key to the understanding of electronic conductivity and superconductivity which occurs in a nominally valence-precise compound.

摘要

高温超导在传感器到能源分配等领域有广泛的应用。最近在含有电子活性 BiS2 层的化合物中发现这一现象,这有可能为超导领域开辟一个新篇章。在这里,我们报告了两种新的三元 Bi-O-S 化合物 Bi2OS2 和 Bi3O2S3 的鉴定和基本性质。前者是非超导的;后者可能解释了之前在“Bi4O4S3”中报道的 T(c)=4.5K 的超导性。Bi3O2S3 的超导性被发现对 Bi2OS2 型堆叠缺陷的数量敏感;较少的缺陷与 Meissner 屏蔽分数和 T(c)的增加相关。阐明这些堆叠缺陷的电子后果可能是理解在名义上价态精确的化合物中发生的电子导电性和超导性的关键。

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