Department of Physics and Institute of Theoretical Physics, Nanjing Normal University, Nanjing 210023, People's Republic of China.
J Phys Condens Matter. 2013 May 1;25(17):175004. doi: 10.1088/0953-8984/25/17/175004. Epub 2013 Apr 4.
The surface phonon and electron-phonon interactions in the two-dimensional topological insulator Bi(111) film are calculated, including the spin-orbit coupling from density-functional perturbation theory. By analyzing the zone-center phonons, an anomalous phonon hardening of two Raman modes, Eg and A1g, in ultrathin films is found and is explained by considering the redistribution of the charge density on the surface of the semimetallic Bi. Surface phonon band structures and the surface phonon density of states are given, and we find that softening and hardening of surface phonon modes occur simultaneously in ultrathin Bi film, but the softening may dominate over the hardening. The calculated electron-phonon coupling constant λ for Bi(111) film is much larger than that for the bulk, which might induce surface-localized superconductivity in this two-dimensional topological insulator.
计算了二维拓扑绝缘体 Bi(111) 薄膜中的表面声子和电子-声子相互作用,包括来自密度泛函微扰理论的自旋轨道耦合。通过分析晶区声子,在超薄薄膜中发现了两个 Raman 模 Eg 和 A1g 的异常声子硬化,并通过考虑半金属 Bi 表面上的电荷密度再分配来解释这一现象。给出了表面声子能带结构和表面声子态密度,我们发现,在超薄 Bi 薄膜中,表面声子模式同时发生软化和硬化,但软化可能会主导硬化。计算得到的 Bi(111) 薄膜的电子-声子耦合常数 λ 远大于体材料的值,这可能会在这种二维拓扑绝缘体中诱导出表面局域超导性。