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二维 Bi 相在 Cu(100)表面的轨道依赖 Rashba 劈裂和电子-声子耦合。

Orbital dependent Rashba splitting and electron-phonon coupling of 2D Bi phase on Cu(100) surface.

机构信息

Dipartimento di Fisica, Università di Roma "La Sapienza," Piazzale A. Moro 5, I-00185 Roma, Italy.

出版信息

J Chem Phys. 2013 Nov 14;139(18):184707. doi: 10.1063/1.4828865.

Abstract

A monolayer of bismuth deposited on the Cu(100) surface forms a highly ordered c(2×2) reconstructed phase. The low energy single particle excitations of the c(2×2) Bi/Cu(100) present Bi-induced states with a parabolic dispersion in the energy region close to the Fermi level, as observed by angle-resolved photoemission spectroscopy. The electronic state dispersion, the charge density localization, and the spin-orbit coupling have been investigated combining photoemission spectroscopy and density functional theory, unraveling a two-dimensional Bi phase with charge density well localized at the interface. The Bi-induced states present a Rashba splitting, when the charge density is strongly localized in the Bi plane. Furthermore, the temperature dependence of the spectral density close to the Fermi level has been evaluated. Dispersive electronic states offer a large number of decay channels for transitions coupled to phonons and the strength of the electron-phonon coupling for the Bi/Cu(100) system is shown to be stronger than for Bi surfaces and to depend on the electronic state symmetry and localization.

摘要

在 Cu(100) 表面沉积的单层铋形成了高度有序的 c(2×2)重构相。角分辨光电子能谱观察到,c(2×2)Bi/Cu(100)中的低能单粒子激发具有在接近费米能级的能量区域内呈抛物线色散的 Bi 诱导态。通过光电子能谱和密度泛函理论的结合,研究了电子态色散、电荷密度局域化和自旋轨道耦合,揭示了具有电荷密度在界面处强烈局域的二维 Bi 相。当电荷密度强烈局域在 Bi 平面时,Bi 诱导态会出现 Rashba 劈裂。此外,还评估了费米能级附近的谱密度随温度的变化。弥散的电子态为与声子耦合的跃迁提供了大量的衰减通道,并且 Bi/Cu(100)系统的电子-声子耦合强度被证明比 Bi 表面更强,并且取决于电子态对称性和局域化。

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