School of Biomedical Sciences, University of Leeds, Leeds, LS2 9JT, United Kingdom.
J Neurosci. 2013 Apr 3;33(14):6041-6. doi: 10.1523/JNEUROSCI.4275-12.2013.
We have identified a new signaling role for nitric oxide (NO) in neurons from the trigeminal ganglia (TG). We show that in rat sensory neurons from the TG the NO donor, S-nitroso-N-acetyl-dl-penicillamine, inhibited M-current. This inhibitory effect was blocked by NO scavenging, while inhibition of NO synthases increased M-current, suggesting that tonic NO levels inhibit M-current in TG neurons. Moreover NO increased neuronal excitability and calcitonin gene-related peptide (CGRP) release and these effects could be prevented by perturbing M-channel function. First, NO-induced depolarization was prevented by pre-application of the M-channel blocker XE991 and second, NO-induced increase in CGRP release was prevented by incubation with the M-channel opener retigabine. We investigated the mechanism of the effects of NO on M-channels and identified a site of action of NO to be the redox modulatory site at the triplet of cysteines within the cytosolic linker between transmembrane domains 2 and 3, which is also a site of oxidative modification of M-channels by reactive oxygen species (ROS). NO and oxidative modifications have opposing effects on M-current, suggesting that a tightly controlled local redox and NO environment will exert fine control over M-channel activity and thus neuronal excitability. Together our data have identified a dynamic redox sensor within neuronal M-channels, which mediates reciprocal regulation of channel activity by NO and ROS. This sensor may play an important role in mediating excitatory effects of NO in such trigeminal disorders as headache and migraine.
我们已经确定了一氧化氮(NO)在三叉神经节(TG)神经元中的新信号作用。我们表明,在大鼠 TG 感觉神经元中,NO 供体 S-亚硝基-N-乙酰-DL-青霉胺抑制 M 电流。这种抑制作用被 NO 清除物阻断,而 NO 合酶的抑制增加了 M 电流,表明 TG 神经元中的持续 NO 水平抑制 M 电流。此外,NO 增加神经元兴奋性和降钙素基因相关肽(CGRP)释放,并且这些效应可以通过干扰 M 通道功能来预防。首先,通过预应用 M 通道阻断剂 XE991 预防了 NO 诱导的去极化,其次,通过用 M 通道开放剂 retigabine 孵育来预防了 NO 诱导的 CGRP 释放增加。我们研究了 NO 对 M 通道的作用机制,并确定了 NO 的作用部位是跨膜域 2 和 3 之间细胞溶质连接体中三胱氨酸的氧化还原调节位点,这也是活性氧(ROS)对 M 通道进行氧化修饰的位点。NO 和氧化修饰对 M 电流具有相反的影响,表明严格控制的局部氧化还原和 NO 环境将对 M 通道活性和神经元兴奋性进行精细控制。总之,我们的数据确定了神经元 M 通道内的动态氧化还原传感器,该传感器介导了 NO 和 ROS 对通道活性的相互调节。该传感器可能在介导如头痛和偏头痛等三叉神经紊乱中 NO 的兴奋作用方面发挥重要作用。