Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
Opt Lett. 2013 Apr 15;38(8):1259-61. doi: 10.1364/OL.38.001259.
A passive all-silicon optical diode is demonstrated to realize a record high nonreciprocal transmission ratio (NTR) of 40 dB. Individual microrings that make up the device are experimentally studied to explain the nonlinear power dynamics. There is a compromise between the NTR and insertion loss, and possible solutions for further improvements are discussed. This work provides a way to realize extremely high optical nonreciprocity on chip for optical information processing applications.
一个被动全硅光学二极管实现了创纪录的 40dB 高非互易传输比(NTR)。对构成该器件的单个微环进行了实验研究,以解释非线性功率动态。NTR 和插入损耗之间存在折衷,讨论了进一步改进的可能解决方案。这项工作为在芯片上实现用于光信息处理应用的极高光学非互易性提供了一种方法。