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胶体质点基底曲率对 pH 响应型聚电解质刷生长的影响。

Effect of colloidal substrate curvature on pH-responsive polyelectrolyte brush growth.

机构信息

Priority Research Centre for Advanced Particle Processing and Transport, University of Newcastle , Callaghan, NSW 2308, Australia.

出版信息

Langmuir. 2013 May 21;29(20):6131-40. doi: 10.1021/la4004092. Epub 2013 May 7.

Abstract

Coatings consisting of polymer brushes are an effective way to modify solid interfaces. Polymer brush-modified hybrid particles have been prepared by surface-initiated activators regenerated by electron transfer atom transfer radical polymerization (SI-ARGET ATRP) of 2-(diethylamino)ethyl methacrylate (DEA) on silica particles. We have optimized the synthesis with respect to changing the reducing agent, temperature, and reaction solvent from an aqueous ethanol mixture to an aqueous methanol mixture. Our flexible electrostatically adsorbed macroinitiator approach allows for the modification of a variety of surfaces. Polybasic brushes have been grown on silica particles of different sizes, from 120 to 840 nm in diameter, as well as on wafers, and a comparison of the products has allowed the effect of surface curvature to be elucidated. An examination of the thickness of the dry brush and the aqueous hydrodynamic brush at both pH 7 and at 4 demonstrated that growth increased substantially with substrate curvature for particles with a diameter below 450 nm. This is attributed to the increasing separation between active chain ends, reducing the rate of termination. This is believed to be the first time that this effect has been demonstrated experimentally. Furthermore, we have seen that polymer brush growth on planar wafers was significantly reduced when the reaction mixture was stirred.

摘要

聚合物刷涂层是修饰固体界面的有效方法。通过在硅胶颗粒上进行 2-(二乙氨基)乙基甲基丙烯酸酯(DEA)的表面引发剂再生电子转移原子转移自由基聚合(SI-ARGET ATRP),制备了聚合物刷修饰的杂化颗粒。我们已经针对改变还原剂、温度和反应溶剂,从水-乙醇混合物到水-甲醇混合物,对合成进行了优化。我们灵活的静电吸附大分子引发剂方法允许对各种表面进行修饰。在不同大小的硅胶颗粒(直径为 120 至 840nm)、晶片上,已经生长了多基聚合物刷,并对产物进行了比较,阐明了表面曲率的影响。在 pH 值为 7 和 4 时,对干燥刷和水动力刷的厚度进行了检查,结果表明,对于直径小于 450nm 的颗粒,随着基质曲率的增加,生长显著增加。这归因于活性链末端之间的间隔增加,从而降低了终止速率。据信,这是首次通过实验证明了这种效应。此外,我们还发现,当反应混合物被搅拌时,在平面晶片上的聚合物刷生长显著减少。

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