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原子层沉积法制备的一维和二维 TiO₂的几何纳米结构对吸收边的影响。

Effect of geometric nanostructures on the absorption edges of 1-D and 2-D TiO₂ fabricated by atomic layer deposition.

机构信息

Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu 30010, Taiwan, Republic of China.

出版信息

ACS Appl Mater Interfaces. 2013 May;5(9):3549-55. doi: 10.1021/am302219n. Epub 2013 Apr 26.

Abstract

2-Dimensional (2-D) TiO2 thin films and 1-dimensional (1-D) TiO2 nanotube arrays were fabricated on Si and quartz substrates using atomic layer deposition (ALD) with an anodic aluminum oxide (AAO) template at 400 °C. The film thickness and the tube wall thickness can be precisely controlled using the ALD approach. The intensities of the absorption spectra were enhanced by an increase in the thickness of the TiO2 thin film and tube walls. A blue-shift was observed for a decrease in the 1-D and 2-D TiO2 nanostructure thicknesses, indicating a change in the energy band gap with the change in the size of the TiO2 nanostructures. Indirect and direct interband transitions were used to investigate the change in the energy band gap. The results indicate that both quantum confinement and interband transitions should be considered when the sizes of 1-D and 2-D TiO2 nanostructures are less than 10 nm.

摘要

使用原子层沉积(ALD)技术,在 400°C 下,通过阳极氧化铝(AAO)模板在 Si 和石英衬底上制备了二维(2-D)TiO2 薄膜和一维(1-D)TiO2 纳米管阵列。通过 ALD 方法可以精确控制薄膜和管壁的厚度。TiO2 薄膜和管壁厚度的增加增强了吸收光谱的强度。随着 1-D 和 2-D TiO2 纳米结构厚度的减小,观察到蓝移,表明随着 TiO2 纳米结构尺寸的变化,能带隙发生了变化。使用间接和直接带间跃迁来研究能带隙的变化。结果表明,当 1-D 和 2-D TiO2 纳米结构的尺寸小于 10nm 时,量子限制和带间跃迁都应该被考虑。

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