Electrical and Computer Engineering Department, University of Utah, Salt Lake City, UT 84112, USA.
Nanotechnology. 2012 Sep 28;23(38):385601. doi: 10.1088/0957-4484/23/38/385601. Epub 2012 Sep 4.
Growth of TiO(2) nanotubes on thin Ti film deposited on Si wafers with site-specific and patterned growth using a photolithography technique is demonstrated for the first time. Ti films were deposited via e-beam evaporation to a thickness of 350-1000 nm. The use of a fluorinated organic electrolyte at room temperature produced the growth of nanotubes with varying applied voltages of 10-60 V (DC) which remained stable after annealing at 500 °C. It was found that variation of the thickness of the deposited Ti film could be used to control the length of the nanotubes regardless of longer anodization time/voltage. Growth of the nanotubes on a SiO(2) barrier layer over a Si wafer, along with site-specific and patterned growth, enables potential application of TiO(2) nanotubes in NEMS/MEMS-type devices.
首次展示了使用光刻技术在 Si 晶片上沉积的具有特定位置和图案的薄 Ti 膜上生长 TiO(2) 纳米管。Ti 薄膜通过电子束蒸发沉积到 350-1000nm 的厚度。使用室温下的氟化有机电解质，在施加 10-60V（直流）的不同电压下生长纳米管，在 500°C 退火后仍保持稳定。结果发现，沉积的 Ti 薄膜厚度的变化可用于控制纳米管的长度，而与更长的阳极氧化时间/电压无关。在 Si 晶片上的 SiO(2) 阻挡层上生长纳米管，并进行特定位置和图案化生长，使得 TiO(2) 纳米管在 NEMS/MEMS 类型器件中有潜在的应用。
