Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA.
Nano Lett. 2013 Jun 12;13(6):2376-80. doi: 10.1021/nl400060j. Epub 2013 May 14.
Room-temperature polariton lasing from a GaN-dielectric microcavity is demonstrated with optical excitation. The device is fabricated with a GaN nanowire array clad by Si3N4/SiO2-distributed Bragg reflectors. The nanowire array is initially grown on silicon substrate by molecular beam epitaxy. A distinct nonlinearity in the lower polariton emission is observed at a threshold optical energy density of 625 nJ/cm(2), accompanied by significant line width narrowing to 5 meV and a small blue shift of ~1 meV. The measured polariton dispersion is characterized by a Rabi splitting of 40 meV and a cavity exciton detuning of -17 meV. The device described here is a demonstration of exciton-photon strong coupling phenomenon in an array of light emitters and paves the way for the realization of a room temperature electrically injected polariton laser.
室温下，通过光激发实现了 GaN 介质微腔中的极化激元激光。该器件采用 GaN 纳米线阵列和 Si3N4/SiO2 分布布拉格反射器构成。纳米线阵列最初通过分子束外延在硅衬底上生长。在光学能量密度为 625 nJ/cm(2)的阈值下，观察到下极化激元发射的明显非线性，同时线宽显著变窄至 5 meV，蓝移约 1 meV。所测量的极化激元色散由 40 meV 的拉比分裂和-17 meV 的腔激子失谐表征。这里描述的器件展示了在光发射器阵列中激子-光子强耦合现象，为实现室温电注入极化激元激光器铺平了道路。
