School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
Nano Lett. 2013 Jun 12;13(6):2647-53. doi: 10.1021/nl400792w. Epub 2013 May 3.
Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 μm in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the p-type nanowire field effect transistor, the on/off ratio, threshold voltage, mobility, and carrier concentration of 0.2% Sb-doped sample are found to be 10(5), 2.1 V, 0.82 cm(2)·V(-1)·s(-1), and 2.6 × 10(17) cm(-3), respectively, and the corresponding values for 1% Sb doped samples are 10(4), 2.0 V, 1.24 cm(2)·V(-1)·s(-1), and 3.8 × 10(17) cm(-3). We further investigated the universality of piezotronic effect in the as-synthesized Sb-doped p-type ZnO NWs and reported for the first time strain-gated piezotronic transistors as well as piezopotential-driven mechanical energy harvesting based on solution-grown p-type ZnO NWs. The results presented here broaden the scope of piezotronics and extend the framework for its potential applications in electronics, optoelectronics, smart MEMS/NEMS, and human-machine interfacing.
研究 p 型压电半导体中的压电器件效应对于发展完整的压电器件理论以及设计/制造具有更复杂功能的新型压电器件应用至关重要。使用低温溶液法，我们能够在刚性和柔性衬底上制备出超长（长达 60μm）的 Sb 掺杂 p 型 ZnO 纳米线。对于 p 型纳米线场效应晶体管，0.2% Sb 掺杂样品的开关比、阈值电压、迁移率和载流子浓度分别为 10(5)、2.1V、0.82cm(2)·V(-1)·s(-1)和 2.6×10(17)cm(-3)，而 1% Sb 掺杂样品的相应值分别为 10(4)、2.0V、1.24cm(2)·V(-1)·s(-1)和 3.8×10(17)cm(-3)。我们进一步研究了所合成的 Sb 掺杂 p 型 ZnO NWs 中压电器件效应的普遍性，并首次报道了基于溶液生长的 p 型 ZnO NWs 的应变栅控压电器件和压电势驱动的机械能收集。这里呈现的结果拓宽了压电器件的范围，并扩展了其在电子、光电、智能 MEMS/NEMS 和人机交互等领域潜在应用的框架。
