Cai Le, Li Jinzhu, Dong Haibo, Zhao Duan, Zhang Xiaoxian, Zeng Qingsheng, Zhou Weiya, Xie Sishen
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
J Nanosci Nanotechnol. 2013 Feb;13(2):1327-30. doi: 10.1166/jnn.2013.5994.
Single Walled Carbon Nanotube (SWCNT) films were directly synthesized via Floating Catalyst Chemical Vapor Deposition (FCCVD) method. Temperature dependent resistance measurements were carried out on the as-grown and chemical treated SWCNTs films. A "U" shaped curve was obtained for each sample, with a significant variation in the crossover temperatures between the as-grown and treated samples. A heterogeneous model was adopted to interpret the experimental data, revealing the coexistence of anisotropic 1D metallic conduction, conventional metallic conduction and fluctuation assisted tunneling. Our results implied very low barriers, verifying the good intertube and interbundle contacts in the directly synthesized SWCNTs films. We speculated that oxidization and acid treatments would affect the overall configuration of the films, leading to the changes in the temperature dependence of resistance. In addition, Raman and absorption spectra indicated that oxidization and acid process would cause moderate changes in the hole carrier concentration of the films.
通过浮动催化化学气相沉积(FCCVD)方法直接合成了单壁碳纳米管(SWCNT)薄膜。对生长态和化学处理后的SWCNT薄膜进行了电阻随温度变化的测量。每个样品都得到了一条“U”形曲线,生长态和处理后样品的交叉温度有显著变化。采用非均匀模型解释实验数据,揭示了各向异性一维金属传导、传统金属传导和涨落辅助隧穿的共存。我们的结果表明势垒非常低,证实了直接合成的SWCNT薄膜中管间和管束间具有良好的接触。我们推测氧化和酸处理会影响薄膜的整体结构,导致电阻温度依赖性的变化。此外,拉曼光谱和吸收光谱表明,氧化和酸处理过程会使薄膜的空穴载流子浓度发生适度变化。