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通过延长分子烷基链长度实现具有更低阈值电压的双稳记忆器件。

Bistable memory devices with lower threshold voltage by extending the molecular alkyl-chain length.

机构信息

College of Chemistry, Chemical Engineering and Materials Science, China Petroleum and Chemical Industry Key Laboratory of Organic Wastewater Adsorption Treatment & Resource, Soochow University, Suzhou, Jiangsu 215123, China.

出版信息

Phys Chem Chem Phys. 2013 Jun 21;15(23):9212-8. doi: 10.1039/c3cp51290h. Epub 2013 May 8.

DOI:10.1039/c3cp51290h
PMID:23652665
Abstract

Three organic small molecules with alkyl chains of different lengths based on an azobenzene scaffold were designed and synthesized. The indium-tin oxide (ITO)-Azo-Al sandwich memory devices showed write-once-read-many-times (WORM) characteristics. The switch threshold voltage of Azo-based memory devices significantly decreased as the end-capping alkyl chain extends, which is totally consistent with the AFM and X-ray diffraction results that the thin films showed smoother morphologies and closer intermolecular packing with the molecular alkyl-chain length prolonging. These results demonstrated that variation in the alkyl-chain length at the end of the conjugated molecules is a powerful strategy for tuning film microstructure and intermolecular packing to enable high performance of the fabricated sandwiched devices.

摘要

基于偶氮苯骨架设计并合成了三种具有不同链长烷基侧链的有机小分子。铟锡氧化物(ITO)-Azo-Al 三明治记忆器件表现出了一次写入多次读取(WORM)的特性。基于偶氮苯的记忆器件的开关阈值电压随着末端封端烷基链的延长而显著降低,这与原子力显微镜和 X 射线衍射结果完全一致,即薄膜表现出更平滑的形态和更紧密的分子间堆积,随着分子烷基链长度的延长。这些结果表明,改变共轭分子末端的烷基链长度是一种有效的策略,可以调节薄膜的微观结构和分子间堆积,从而提高所制备的三明治器件的性能。

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引用本文的文献

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