School of Nano-Bioscience & Chemical Engineering, KIER-UNIST Advanced Center for Energy, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea.
ACS Appl Mater Interfaces. 2013 Jun 12;5(11):4865-71. doi: 10.1021/am400618r. Epub 2013 May 28.
A series of o-xylene and indene fullerene derivatives with varying frontier molecular orbital energy levels were utilized for assessing the impact of the number of solubilizing groups on the electrical performance of fullerene-based organic-field-effect transistors (OFETs). The charge-carrier polarity was found to be strongly dependent upon the energy levels of fullerene derivatives. The o-xylene C60 monoadduct (OXCMA) and indene C60 monoadduct (ICMA) exhibited unipolar n-channel behaviors with high electron mobilities, whereas the bis- and trisadducts of indene and o-xylene C60 derivatives showed ambipolar charge transport. The OXCMA OFETs fabricated by solution shearing and molecular n-type doping showed an electron mobility of up to 2.28 cm(2) V(-1) s(-1), which is one of the highest electron mobilities obtained from solution-processed fullerene thin-film devices. Our findings systematically demonstrate the relationship between the energy level and charge-carrier polarity and provide insight into molecular design and processing strategies toward high-performance fullerene-based OFETs.
一系列具有不同前沿分子轨道能级的邻二甲苯和茚满富勒烯衍生物被用于评估增溶基团数量对富勒烯基有机场效应晶体管（OFET）电性能的影响。发现载流子极性强烈依赖于富勒烯衍生物的能级。邻二甲苯 C60 单加成物（OXCMA）和茚满 C60 单加成物（ICMA）表现出具有高电子迁移率的单极 n 通道行为，而茚满和邻二甲苯 C60 衍生物的双加成物和三加成物则表现出双极电荷输运。通过溶液剪切和分子 n 型掺杂制备的 OXCMA OFET 表现出高达 2.28 cm(2) V(-1) s(-1)的电子迁移率，这是从溶液处理的富勒烯薄膜器件中获得的最高电子迁移率之一。我们的研究结果系统地证明了能级和载流子极性之间的关系，并为高性能富勒烯基 OFET 的分子设计和处理策略提供了深入了解。
