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低温下负载铜位的制备:一种利用气相还原法实现的高效、可控策略。

Fabrication of supported cuprous sites at low temperatures: an efficient, controllable strategy using vapor-induced reduction.

机构信息

State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemistry and Chemical Engineering, Nanjing University of Technology , Nanjing 210009, China.

出版信息

J Am Chem Soc. 2013 Jun 5;135(22):8137-40. doi: 10.1021/ja4030269. Epub 2013 May 20.

DOI:10.1021/ja4030269
PMID:23679049
Abstract

Selective reduction of supported CuO to Cu2O was realized using the strategy of vapor-induced reduction, in which HCHO/H2O vapor diffuses into the pores of the support and interacts with predispersed CuO. This new strategy allows the fabrication of supported cuprous sites at much lower temperatures within a short time, avoids the formation of Cu(0) with a Cu(I) yield of nearly 100%, and results in materials with good adsorption performance, which is impossible to achieve by conventional methods.

摘要

采用蒸气诱导还原策略实现了负载氧化铜向氧化亚铜的选择性还原,其中 HCHO/H2O 蒸气扩散进入载体的孔道并与预分散的 CuO 相互作用。这种新策略允许在短时间内在更低的温度下制备负载的亚铜位,避免了形成 Cu(0),铜(I)的产率接近 100%,并且得到的材料具有良好的吸附性能,这是传统方法无法实现的。

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