Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, D-85748 Garching, Germany.
Nano Lett. 2013 Jul 10;13(7):3011-6. doi: 10.1021/nl304528j. Epub 2013 Jun 6.
We report on resonant Raman experiments carried out on wurtzite InAs nanowires. Resonant conditions have been obtained by tuning either the excitation energy or the band gap through external high pressure at fixed excitation energy. A complete azimuthal study of the Raman spectra with two laser excitation lines (2.41 and 1.92 eV) has also been performed on a single wire. The measured E2(H) mode resonance indicates that the E1(A) gap is about 2.4 eV, which is considerably reduced with respect to the zinc-blende InAs E1 gap. These findings confirm recent theoretical calculations of crystal phase induced bandstructure modifications.
我们报告了在纤锌矿 InAs 纳米线上进行的共振拉曼实验。通过在固定激发能下调整激发能量或带隙来实现共振条件。我们还在一根纳米线上用两条激光激发线（2.41 和 1.92 eV）进行了完整的拉曼光谱的角向研究。测量的 E2(H) 模式共振表明 E1(A) 带隙约为 2.4 eV，与闪锌矿 InAs E1 带隙相比有相当大的减小。这些发现证实了最近关于晶体相诱导能带结构改性的理论计算。
