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基于第一性原理研究杂环低聚物晶体中电子和空穴的各向异性迁移率。

First-principles investigation of anisotropic electron and hole mobility in heterocyclic oligomer crystals.

机构信息

State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P R China.

出版信息

Chemphyschem. 2013 Aug 5;14(11):2579-88. doi: 10.1002/cphc.201300085. Epub 2013 May 29.

Abstract

Based on quantum chemistry calculations combined with the Marcus-Hush electron transfer theory, we investigated the charge-transport properties of oligothiophenes (nTs) and oligopyrroles (nPs) (n=6, 7, 8) as potential p- or n-type organic semiconductor materials. The results of our calculations indicate that 1) the nPs show intrinsic hole mobilities as high as or even higher than those of nTs, and 2) the vertical ionization potentials (VIPs) of the nPs are about 0.6-0.7 eV smaller than the corresponding VIPs of the nTs. Based on their charge-transport ability and hole-injection efficiency, the nPs have potential as p-type organic semiconducting materials. Furthermore, it was also found that the maximum values of the electron-transfer mobility for the nTs are larger by one-to-two orders of magnitude than the corresponding maximum values of hole-transfer mobility, which suggests that the nTs have the potential to be developed as promising n-type organic semiconducting materials owing to their electron mobility.

摘要

基于量子化学计算结合 Marcus-Hush 电子转移理论,我们研究了作为潜在的 p 型或 n 型有机半导体材料的齐聚噻吩(nTs)和齐聚吡咯(nPs)(n=6,7,8)的电荷输运性质。我们的计算结果表明:1)nPs 表现出与 nTs 相当甚至更高的本征空穴迁移率;2)nPs 的垂直电离势(VIP)比相应的 nTs 的 VIP 小约 0.6-0.7 eV。基于其电荷输运能力和空穴注入效率,nPs 有望成为 p 型有机半导体材料。此外,还发现 nTs 的电子转移迁移率的最大值比相应的空穴转移迁移率的最大值大一个数量级到两个数量级,这表明 nTs 有可能成为有前途的 n 型有机半导体材料,因为它们的电子迁移率。

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