Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany.
Ultramicroscopy. 2013 Jul;130:87-93. doi: 10.1016/j.ultramic.2013.04.007. Epub 2013 May 14.
The growth of cerium oxide on Ru(0001) by reactive molecular beam epitaxy has been investigated using low-energy electron microscopy (LEEM) and diffraction as well as local valence band photoemission. The oxide islands are found to adopt a carpet-like growth mode, which depending on the local substrate morphology and misorientation leads to deviations from the otherwise almost perfect equilateral shape at a growth temperature of 850 °C. Furthermore, although even at this high growth temperature the micron-sized CeO₂(111) islands are found to exhibit different lattice registries with respect to the hexagonal substrate, the combination of dark-field LEEM and local intensity-voltage analysis reveals that the oxidation state of the islands is homogeneous down to the 10 nm scale.
采用低能电子显微镜（LEEM）和衍射以及局域价带光发射研究了通过反应分子束外延在 Ru(0001)上生长的氧化铈。发现氧化岛采用类似地毯的生长模式，这取决于局部衬底形貌和取向，导致在 850°C 的生长温度下偏离否则几乎完美的等边形状。此外，尽管即使在如此高的生长温度下，微米级的 CeO₂(111) 岛相对于六边形衬底也被发现表现出不同的晶格配准，但暗场 LEEM 和局域强度-电压分析的组合表明，岛的氧化态在 10nm 尺度上是均匀的。
