Zhou Fengxue, Qi Yihong, Sun Hui, Chen Dijun, Yang Jie, Niu Yueping, Gong Shangqing
Department of Physics, East China University of Science and Technology, Shanghai 200237, China.
Opt Express. 2013 May 20;21(10):12249-59. doi: 10.1364/OE.21.012249.
We propose a scheme for obtaining an electromagnetically induced grating in an asymmetric semiconductor quantum well (QW) structure via Fano interference. In our structure, owing to Fano interference, the diffraction intensity of the grating, especially the first-order diffraction, can be significantly enhanced. The diffraction efficiency of the grating can be controlled efficiently by tuning the control field intensity, the interaction length, the coupling strength of tunneling, etc. This investigation may be used to develop novel photonic devices in semiconductor QW systems.
我们提出了一种通过法诺干涉在非对称半导体量子阱（QW）结构中获得电磁诱导光栅的方案。在我们的结构中，由于法诺干涉，光栅的衍射强度，尤其是一阶衍射强度，可以得到显著增强。通过调节控制场强度、相互作用长度、隧穿耦合强度等，可以有效地控制光栅的衍射效率。这项研究可用于开发半导体量子阱系统中的新型光子器件。
