Woo Ju Yeon, Lee Jongsoo, Lee Hansung, Lee Naesung, Oh Ji Hye, Do Young Rag, Han Chang-Soo
1School of Mechanical Engineering, Korea University, Seoul 136713, South Korea.
Opt Express. 2013 May 20;21(10):12519-26. doi: 10.1364/OE.21.012519.
The field emission (FE) device based on quantum dot (QD) films as a cathodoluminescent (CL) material has not emerged yet due to the relatively low quantum efficiency and weak photostability of nanocrystals (NCs). Here we improve film stability and luminescence yields by preparing neat films of well-packed core-multishell QDs using spray coating method and then using low-temperature atomic layer deposition (ALD) to infill the pores of these films with metal oxides to produce inorganic nanocomposites. The ALD coatings to protect oxidation and degradation by electrons prevent internal atomic and molecular diffusion and decrease surface trap densities of QD films. Furthermore, the CL of the core-multishell QD films is 2.4 times higher than before ALD infilling. We fabricate the FE device by combining cathode structure with carbon nanotube (CNT) emitters and anode plates with QD thin film and successfully can get brilliant images of the light-emitting FE device. Our research opens a way for developing new quantum optoelectronics with high-performance.
由于纳米晶体（NCs）的量子效率相对较低且光稳定性较弱，基于量子点（QD）薄膜作为阴极发光（CL）材料的场发射（FE）器件尚未出现。在此，我们通过使用喷涂法制备紧密堆积的核-多壳量子点的纯薄膜，然后使用低温原子层沉积（ALD）用金属氧化物填充这些薄膜的孔隙以生产无机纳米复合材料，从而提高薄膜稳定性和发光产率。ALD涂层可防止电子氧化和降解，防止内部原子和分子扩散，并降低量子点薄膜的表面陷阱密度。此外，核-多壳量子点薄膜的阴极发光比ALD填充前高2.4倍。我们通过将阴极结构与碳纳米管（CNT）发射器相结合以及将阳极板与量子点薄膜相结合来制造场发射器件，并成功获得了发光场发射器件的清晰图像。我们的研究为开发高性能的新型量子光电器件开辟了一条道路。
