Mg 组分依赖的 Zn(1-x)Mg(x)O/ZnO 异质结能带偏移。

Mg composition dependent band offsets of Zn(1-x)Mg(x)O/ZnO heterojunctions.

机构信息

State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.

出版信息

Phys Chem Chem Phys. 2013 Jul 21;15(27):11231-5. doi: 10.1039/c3cp51156a. Epub 2013 Jun 7.

DOI:10.1039/c3cp51156a

PMID:23744185

Abstract

The valence band offsets (ΔEV) of Zn(1-x)Mg(x)O/ZnO heterojunctions grown by plasma-assisted molecular beam epitaxy were measured by photoelectron spectroscopy. From the directly obtained ΔEV values, the related conduction band offsets (ΔEC) were deduced. All the Zn(1-x)Mg(x)O/ZnO heterojunctions exhibit a type-I band alignment with the ΔEC/ΔEV estimated to be 1.5, 1.8, 2.0 for x = 0.10, 0.15 and 0.20, respectively. The band offsets of Zn(1-x)Mg(x)O/ZnO heterojunctions depend on Mg composition. The accurate determination of energy band alignment of Zn(1-x)Mg(x)O/ZnO is helpful for designing ZnO based optoelectronic devices.

摘要

通过光电子能谱测量了由等离子体辅助分子束外延生长的 Zn(1-x)Mg(x)O/ZnO 异质结的价带偏移量 (ΔEV)。从直接获得的 ΔEV 值中，推断出相关的导带偏移量 (ΔEC)。所有 Zn(1-x)Mg(x)O/ZnO 异质结均表现出类型-I 能带排列，ΔEC/ΔEV 分别估计为 0.10、0.15 和 0.20 时的 1.5、1.8 和 2.0。Zn(1-x)Mg(x)O/ZnO 异质结的能带偏移量取决于 Mg 组成。准确确定 Zn(1-x)Mg(x)O/ZnO 的能带排列有助于设计基于 ZnO 的光电设备。