Department of Physics, Yale University, New Haven, Connecticut 06520, USA.
Phys Rev Lett. 2013 May 24;110(21):216402. doi: 10.1103/PhysRevLett.110.216402. Epub 2013 May 21.
We study the influence of electron puddles created by doping of a 2D topological insulator on its helical edge conductance. A single puddle is modeled by a quantum dot tunnel coupled to the helical edge. It may lead to significant inelastic backscattering within the edge because of the long electron dwelling time in the dot. We find the resulting correction to the perfect edge conductance. Generalizing to multiple puddles, we assess the dependence of the helical edge resistance on the temperature and doping level and compare it with recent experimental data.
我们研究了由二维拓扑绝缘体掺杂产生的电子液滴对其螺旋边缘电导的影响。通过与螺旋边缘隧道耦合的量子点来模拟单个液滴。由于电子在点中的停留时间较长，这可能导致边缘内的显著非弹性背散射。我们发现了对完美边缘电导的修正。推广到多个液滴，我们评估了螺旋边缘电阻对温度和掺杂水平的依赖性，并将其与最近的实验数据进行了比较。
