溶液法制备的掺镁氧化锌锡薄膜晶体管的电学性能

Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process.

作者信息

Jeon In Young, Lee Ji Yoon, Yoon Dae Ho

机构信息

SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea.

出版信息

J Nanosci Nanotechnol. 2013 Mar;13(3):1741-5. doi: 10.1166/jnn.2013.6710.

DOI:10.1166/jnn.2013.6710

PMID:23755583

Abstract

Zinc tin oxide (ZTO) films were fabricated on SiO2/Si substrate as a function of Mg concentration (the ratio of 3 to 10 atomic%) using a spin-coating process. For the characterization of thin film transistors (TFTs), Zn0.3Sn0.70 channel TFT exhibited a higher on/off ratio compared to Zn0.5 Sn.0.5O channel TFT because the higher Sn concentration can induce more charge carriers. 3 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs showed stable electrical performances such as I(on/off) - 1 x 10(7), micro(sat) = 1.40 cm2 V(-1) s(-1), and S = 0.39 V/decade. However, 10 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs deteriorated their electrical performances due to Mg segregation. The Mg incorporated Zn0.3Sn0.7O channel TFTs effectively suppress off-current and threshold voltage change during positive gate bias stress due to their strong bonding with oxygen.

摘要

采用旋涂工艺在SiO2/Si衬底上制备了不同Mg浓度（原子比为3%至10%）的氧化锌锡（ZTO）薄膜。对于薄膜晶体管（TFT）的表征，Zn0.3Sn0.7O沟道TFT与Zn0.5Sn0.5O沟道TFT相比具有更高的开/关比，因为较高的Sn浓度可以诱导更多的电荷载流子。掺入3原子%Mg的Zn0.3Sn0.7O沟道TFT表现出稳定的电学性能，如I（开/关）-1×10（7），μ（sat）=1.40 cm2 V（-1） s（-1），以及S = 0.39 V/十倍频程。然而，掺入10原子%Mg的Zn0.3Sn0.7O沟道TFT由于Mg偏析而使其电学性能恶化。掺入Mg的Zn0.3Sn0.7O沟道TFT由于其与氧的强键合作用，在正栅极偏压应力下有效地抑制了关态电流和阈值电压的变化。