Lee Donghyeon, Choi Pyungho, Park Areum, Jeon Woojin, Choi Donghee, Lee Sangmin, Choi Byoungdeog
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
J Nanosci Nanotechnol. 2020 Nov 1;20(11):6675-6678. doi: 10.1166/jnn.2020.18761.
In this study, we fabricated Hf-doped indium zinc oxide thin-film transistors (HIZO TFTs) using a solution process. Channel layers of the TFTs were optimized by varying the molar ratio of Hf in the channel layers. The electrical properties of the fabricated devices were compared to gallium indium zinc oxide (GIZO). HIZO TFTs showed 0.12 V threshold voltage, 0.45 V/decade subthreshold swing and 1.24 × 10 on-off current ratio, which were excellent compared to that of GIZO. In particular, when a positive gate bias stress of 10 V was applied for 10³ s, the HIZO TFT exhibited a lower threshold voltage shift of 1.11 V than the GIZO TFT (1.88 V). These results originate from the higher oxygen bonding with Hf in IZO compared to Ga atoms. We confirmed that Hf acts as an excellent carrier suppressor whose properties exceed those of Ga.
在本研究中，我们采用溶液工艺制备了铪掺杂铟锌氧化物薄膜晶体管（HIZO TFT）。通过改变沟道层中铪的摩尔比来优化TFT的沟道层。将制备器件的电学性能与镓铟锌氧化物（GIZO）进行了比较。HIZO TFT表现出0.12 V的阈值电压、0.45 V/十倍频程的亚阈值摆幅和1.24×10的开/关电流比，与GIZO相比这些性能非常优异。特别是，当施加10 V的正栅极偏置应力10³ s时，HIZO TFT的阈值电压偏移为1.11 V，低于GIZO TFT（1.88 V）。这些结果源于与镓原子相比，IZO中铪具有更高的氧键合。我们证实铪作为一种优异的载流子抑制器，其性能超过了镓。
