Hafnium Incorporation in InZnO Thin Film Transistors as a Carrier Suppressor.

In this study, we fabricated Hf-doped indium zinc oxide thin-film transistors (HIZO TFTs) using a solution process. Channel layers of the TFTs were optimized by varying the molar ratio of Hf in the channel layers. The electrical properties of the fabricated devices were compared to gallium indium zinc oxide (GIZO). HIZO TFTs showed 0.12 V threshold voltage, 0.45 V/decade subthreshold swing and 1.24 × 10 on-off current ratio, which were excellent compared to that of GIZO. In particular, when a positive gate bias stress of 10 V was applied for 10³ s, the HIZO TFT exhibited a lower threshold voltage shift of 1.11 V than the GIZO TFT (1.88 V). These results originate from the higher oxygen bonding with Hf in IZO compared to Ga atoms. We confirmed that Hf acts as an excellent carrier suppressor whose properties exceed those of Ga.