DST/NRF Centre of Excellence in Strong Materials and Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, WITS 2050, Johannesburg, South Africa.
Nanoscale. 2013 Jul 21;5(14):6552-7. doi: 10.1039/c3nr01699d. Epub 2013 Jun 12.
Chemical doping of graphene with small boron nitride (BN) domains has been shown to be an effective way of permanently modulating the electronic properties in graphene. Herein we show a facile method of growing large area graphene doped with small BN domains on copper foils using a single step CVD route with methane, boric acid powder and nitrogen gas as the carbon, boron and nitrogen sources respectively. This facile and safe process avoids the use of boranes and ammonia. Optical microscopy confirmed that continuous films were grown and Raman spectroscopy confirmed changes in the electronic structure of the grown BN doped graphene. Using XPS studies we find that both B and N can be substituted into the graphene structure in the form of small BN domains to give a B-N-C system. A novel structure for the BN doped graphene is proposed.
用小氮化硼（BN）畴化学掺杂石墨烯已被证明是一种有效方法，可以永久调节石墨烯中的电子性质。本文展示了一种在铜箔上使用一步 CVD 法，以甲烷、硼酸粉末和氮气分别作为碳、硼和氮源，生长大面积掺杂有小 BN 畴的石墨烯的简便方法。这种简便且安全的方法避免了使用硼烷和氨。光学显微镜证实了连续薄膜的生长，拉曼光谱证实了生长的 BN 掺杂石墨烯的电子结构发生了变化。通过 XPS 研究，我们发现 B 和 N 都可以以小 BN 畴的形式取代石墨烯结构，形成 B-N-C 体系。提出了一种 BN 掺杂石墨烯的新结构。
