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X 射线吸收研究 NiO/氧化物界面的局部结构。

X-ray absorption study of the local structure at the NiO/oxide interfaces.

机构信息

Departamento de Física Aplicada and Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain.

出版信息

J Synchrotron Radiat. 2013 Jul;20(Pt 4):635-40. doi: 10.1107/S0909049513012417. Epub 2013 May 23.

Abstract

This work reports an X-ray absorption near-edge structure (XANES) spectroscopy study at the Ni K-edge in the early stages of growth of NiO on non-ordered SiO2, Al2O3 and MgO thin films substrates. Two different coverages of NiO on the substrates have been studied. The analysis of the XANES region shows that for high coverages (80 Eq-ML) the spectra are similar to that of bulk NiO, being identical for all substrates. In contrast, for low coverages (1 Eq-ML) the spectra differ from that of large coverages indicating that the local order around Ni is limited to the first two coordination shells. In addition, the results also suggest the formation of cross-linking bonds Ni-O-M (M = Si, Al, Mg) at the interface.

摘要

本工作报道了在非有序 SiO2、Al2O3 和 MgO 薄膜衬底上生长的 NiO 的早期阶段,Ni K 边的 X 射线吸收近边结构(XANES)光谱研究。研究了两种不同覆盖度的 NiO 在衬底上的情况。XANES 区域的分析表明,对于高覆盖度(80 Eq-ML),光谱与体相 NiO 相似,对于所有衬底都是相同的。相比之下,对于低覆盖度(1 Eq-ML),光谱与高覆盖度的不同,表明 Ni 周围的局部有序仅限于前两个配位数壳层。此外,结果还表明在界面处形成了交联键 Ni-O-M(M = Si、Al、Mg)。

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