Shen Xinmin, Dai Yifan, Deng Hui, Guan Chaoliang, Yamamura Kazuya
Department of Mechatronic Engineering, National University of Defense Technology, Changsha, Hunan 410073, China.
Opt Express. 2013 Jun 17;21(12):14780-8. doi: 10.1364/OE.21.014780.
An ultrasmooth reaction-sintered silicon carbide surface with an rms roughness of 0.424 nm is obtained after thermal oxidation for 30 min followed by ceria slurry polishing for 30 min. By SEM-EDX analysis, we investigated the thermal oxidation behavior of RS-SiC, in which the main components are Si and SiC. As the oxidation rate is higher in the area with defects, there are no scratches or cracks on the surface after oxidation. However, a bumpy structure is formed after oxidation because the oxidation rates of Si and SiC differ. Through a theoretical analysis of thermal oxidation using the Deal-Grove model and the removal of the oxide layer by ceria slurry polishing in accordance with the Preston equation, a model for obtaining an ultrasmooth surface is proposed and the optimal processing conditions are presented.
在进行30分钟的热氧化，随后进行30分钟的二氧化铈浆料抛光后，获得了均方根粗糙度为0.424纳米的超光滑反应烧结碳化硅表面。通过扫描电子显微镜-能谱分析（SEM-EDX），我们研究了主要成分是硅和碳化硅的反应烧结碳化硅（RS-SiC）的热氧化行为。由于有缺陷的区域氧化速率较高，氧化后表面没有划痕或裂纹。然而，由于硅和碳化硅的氧化速率不同，氧化后形成了凹凸不平的结构。通过使用Deal-Grove模型对热氧化进行理论分析，并根据普雷斯顿方程通过二氧化铈浆料抛光去除氧化层，提出了一种获得超光滑表面的模型，并给出了最佳加工条件。
